DEVICE AND METHOD FOR PLASMA TREATMENT

PROBLEM TO BE SOLVED: To perform plasma treatment on an object to be treated in a high- density plasma atmosphere without giving damages to the object. SOLUTION: An upper electrode 21 and a susceptor 5, which is grounded through a blocking capacitor 6 independently from a treating vessel 2, are resp...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	NAITO YUKIO, HIROSE KEIZO, IMAFUKU KOSUKE, ENDO NORISUKE, NAGASEKI KAZUYA, TAWARA KAZUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To perform plasma treatment on an object to be treated in a high- density plasma atmosphere without giving damages to the object. SOLUTION: An upper electrode 21 and a susceptor 5, which is grounded through a blocking capacitor 6 independently from a treating vessel 2, are respectively provided in the upper and lower sections of the vessel 2 in a state where the electrode 21 and susceptor 5 are faced opposite to each other. The 380 kHz high-frequency power from a high-frequency power source 41 is impressed upon two electrodes through a transformer 42, in such a way that the phase of the power is shifted by 180 deg.. The 13.56 MHz high-frequency power from a high-frequency power source 51 is impressed upon the upper electrode 21. Since the density of plasma is controlled by the high-frequency power from the power source 51 and ion energy is controlled by the high-frequency power from the power source 41, high-selectivity plasma treatment can be performed on a wafer W, without giving damages to the wafer W.