SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE OF THE SAME

PROBLEM TO BE SOLVED: To form a highly reliable capacitor insulating film by preventing the reduction of a pattern accompanying the remove of a hard mask, or the generation of a rough upper face of the pattern, or chipping of a base insulating film. SOLUTION: A ruthenium film 55 and a silicon oxide...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YUNOGAMI TAKASHI, NOJIRI KAZUO, OJI YUZURU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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