SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE OF THE SAME

PROBLEM TO BE SOLVED: To form a highly reliable capacitor insulating film by preventing the reduction of a pattern accompanying the remove of a hard mask, or the generation of a rough upper face of the pattern, or chipping of a base insulating film. SOLUTION: A ruthenium film 55 and a silicon oxide film 56 being a base electrode 51 of the memory cell of a DRAM are formed, and then a photoresist film 57 is patterned on the silicon oxide film 56. The silicon oxide film 56 is etched by using the photoresist film 57 as a mask, so that a silicon oxide film 52 which is a hard mask can be formed. The photoresist film 57 is removed, and the ruthenium film 55 is etched by using the silicon oxide film 52 as a mask, so that a lower electrode 51 can be formed. A base titanium nitride film 47 is etched, and then a BST film 58 which is capacitor insulating film is piled without removing the silicon oxide film 52.