MANUFACTURING EQUIPMENT AND METHOD OF SEMICONDCUTOR DEVICE

PROBLEM TO BE SOLVED: To obtain an oxide nitride film which is uniformly high in nitrogen concentration by a method wherein a high-temperature gas layer formed above a processed substrate is lessened in thickness. SOLUTION: A wafer 8 is introduced into a processing chamber 4 and then placed on a sus...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SAKI KAZUROU, KATSUI SHUJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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