MANUFACTURING EQUIPMENT AND METHOD OF SEMICONDCUTOR DEVICE

PROBLEM TO BE SOLVED: To obtain an oxide nitride film which is uniformly high in nitrogen concentration by a method wherein a high-temperature gas layer formed above a processed substrate is lessened in thickness. SOLUTION: A wafer 8 is introduced into a processing chamber 4 and then placed on a susceptor 9. Then, the wafer 8 is held with the susceptor 9, and a reaction chamber 5 is isolated from the outside air. Then, a valve 23 is opened, a pump 24 is driven, and the valve 18 is opened to feed a mixed gas of oxidizing gas and nitriding gas into the reaction chamber 5 through a flowmeter 19 from an oxidizing gas source 16 and a nitriding gas source 17. In succession, the susceptor 9 and the wafer 8 are rotated with a rotating mechanism 3 whose rotational speed is controlled by a rotation control mechanism 10. When the feed of a mixed gas and the rotational speed of the susceptor 9 become constant, then the wafer 8 is quickly raised in temperature as it is irradiated with light rays from light sources 7 which are controlled in output power by a lamp power controller 6. Thereafter, the wafer is made to drop quickly in temperature, a mixed gas is stopped, the susceptor 9 is stopped from being rotated, and a process is finished.