METHOD AND DEVICE FOR VAPOR-PHASE GROWTH

PROBLEM TO BE SOLVED: To provide a vapor-phase growth device durable at a vapor-phase growth temperature higher than the decomposition temperature 250 deg.C or above, even when using diborane (B2H6) gas. SOLUTION: A vapor-phase growth device is provided which is durable to a vapor-phase growth tempe...

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Hauptverfasser:	ASARI SHIN, KAWAMOTO TAKEYOSHI, TAKAHASHI SEIICHI, MIHASHI TETSUO, YAMAGATA HIDEO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a vapor-phase growth device durable at a vapor-phase growth temperature higher than the decomposition temperature 250 deg.C or above, even when using diborane (B2H6) gas. SOLUTION: A vapor-phase growth device is provided which is durable to a vapor-phase growth temperature higher than the decomposition temperature 250 deg.C wherein at least inner and outer peripheral surfaces of a reactive chamber 13 provided with a substrate 1 for vapor-phase growth, an external heating means 15 for heating the inside of the reactive chamber, and a gas supply pipe 161 which, provided in the atmosphere heated to 250 deg.C or above in the reactive chamber 13, supplies a gas containing diborane (B2H6) into the reactive chamber comprise hydrocarbon, with diborane (B2H6) gas used.