FORMATION OF SELF-ALIGNED SILICIDE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for forming self-aligned silicide of a semiconductor device. SOLUTION: A gate layer is formed on a semiconductor substrate, and it is patterned, and then a metallic layer is formed on the upper part of produced matter. After a first capping layer is formed thereon, the substrate is heated at a first temperature so as to form a metallic silicide on the upper part of the gate layer. The unreacted metallic layer and first capping layer are removed, and a second capping layer is formed on the upper part of the produced matter. The substrate is heated at a higher second temperature than the first temperature. The reaction rate of silicide can be suppressed by the second capping layer during the secondary heat treatment of high temperature, resulting in a silicide having an optimal shape.