METHOD OF FORMING Bi GROUP FERROELECTRIC SUBSTANCE THIN FILM

PROBLEM TO BE SOLVED: To provide a method capable of forming a fine BLSF (Bi group ferroelectric substance) thin film having excellent crystallization even in the case of a heating process for crystallization at a low temperature and capable of forming a BLSF thin film of a SBT group having small or...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SATO YOSHIMI, SAWADA YOSHIHIRO, TAKEUCHI YOSHIYUKI, KOBARI HIDEYA, KAWAKAMI ATSUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CONDUCTORS ELECTRICITY INSULATORS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method capable of forming a fine BLSF (Bi group ferroelectric substance) thin film having excellent crystallization even in the case of a heating process for crystallization at a low temperature and capable of forming a BLSF thin film of a SBT group having small orientation in the C-axis. SOLUTION: In this method, a Bi group ferroelectric substance thin film is formed on an electrode board. In this case, the electrode board is coated with the Bi group ferroelectric substance thin film forming coating liquid, and dried so as to form a film, and thereafter, the first heat processing is performed at 300-600 deg.C of temperature in the humidification atmosphere. Continuously, the second heat processing for crystallization is performed so as to form a Bi ferroelectric substance thin film.