MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device comprising a stable wiring-layer contact structure without complicating the processes. SOLUTION: A photo process for an electrode is performed on a semiconductor silicon substrate 1, and after a silicide film 4, polysilicon film 3, silicon oxide film 2 are etched, a resist patter is removed by ashing. Then, a silicon oxide film 8 is formed and full-surface etch-back is performed, which is stopped so that no silicon nitride film 6 on an electrode is exposed with the silicon oxide film 8 partially remains. Such silicon oxide film 8 which remained at full-surface etch-back is removed, and submerged in a liquid until the surface of silicon nitride film 6 on the electrode is exposed. Then a silicon oxide film 16 and a silicon nitride film 17 are formed. A contact hole is formed on an active region and an electrode. Here, the variation in the thickness of silicon oxide film is canceled with that of a silicon nitride film, so that the contact holes on the active region and electrode are formed almost at the same time.