SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To enable a semiconductor device to be enhanced in assembly yield and connection reliability by a method wherein a bump is provided on the surface of an electrode pad so as to protect a wiring or an active element when the device is bonded to an outer terminal. SOLUTION: An insulating film 2, a first wiring layer, an active element 3, an interlayer insulating film 4, an electrode pad 5, and a protective film 6 having an opening are sequentially formed on a semiconductor board 1. Al of the surface of the electrode pad 5 that comes out in the opening provided in the protective film 6 is substituted with Zn that can be substituted with Ni by reaction, then the semiconductor board 1 is immersed into a plating solution, and an NiP layer 7 as a protrudent electrode is formed through electroless plating as high as 5 μm above the protective film 6. Ni of the surface of the NiP layer 7 is substituted with Au for the formation of an Au layer 8 as a surface film to protect the surface of the NiP layer 7. By this setup, a semiconductor device of this constitution can be improved in assembly yield and connection reliability.