METHOD AND DEVICE FOR REMOVING FINE PARTICLE CONTAMINANT IN TUNGSTEN SILICIDE DEPOSITION PROCESS

PROBLEM TO BE SOLVED: To improve semiconductor yield by removing contaminant remaining in a gas line and contaminant remaining in a chamber by washing a chamber after a gas line is washed. SOLUTION: To remove fine particle contaminant, a valve 102 is closed and Ar gas supply is stopped for purging a...

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Hauptverfasser:	GU KYOHAN, KIN KOSHU, RA DOKON, KIN EIRO, KIN GENEI, KO GENKOKU, KIN CHUKAN, BOKU TOSAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve semiconductor yield by removing contaminant remaining in a gas line and contaminant remaining in a chamber by washing a chamber after a gas line is washed. SOLUTION: To remove fine particle contaminant, a valve 102 is closed and Ar gas supply is stopped for purging an Ar3 carrier gas line 26. In the process, Ar gas in gas lines 36, 12 is supplied to a chamber 10 continuously. After valves 104, 106, 38 are closed and the chamber 10 is purged, the valve 108 is opened and NF3 gas is supplied to the chamber 10 through lines 18, 12, plasma is formed inside a chamber and contaminant is washed. Then the valves 104, 106, 38 are closed for about 10 seconds and valves 104, 108, 50 are closed for cleaning gas lines 12, 24 wherein WF6 gas flows. Although the gas lines 26, 12 are purged by closing the valves 102, 50, the gas line 36 is purged by making Ar gas flow. The valves 104, 106, 38 are closed and the chamber 10 is purged.