NONVOLATILE INTEGRATED CIRCUIT MEMORY DEVICE AND ITS DRIVE METHOD

PROBLEM TO BE SOLVED: To provide an integrated circuit memory device improving an integrated degree of a nonvolatile memory and its drive method. SOLUTION: A memory cell array contains a nonvolatile memory cell array 100 arranged in row and column, a voltage boost circuit 120 providing a boost voltage higher than a source supply voltage, a control circuit 124 generating a first signal notifying a program/erase verifying period and a second signal informing urgency of a row address change, a voltage switching circuit 122 selectively outputting one between the boost voltage and the source supply voltage according to the first, second signals, plural word lines(WL) respectively connected to the corresponding nonvolatile memory cell, plural WL drivers 114 connected between the circuit 122 and the WL and successively driving the WL with one between the boost voltage and the source supply voltage and a row decoder 112 selecting one among the drivers 114 according to a row address, and the second signal is activated during a time interval until the time when the row address is changed when the verification of a final cell of the selected row is ended.