IMPURITY DIFFUSING METHOD, MANUFACTURE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To avoid forming an i-layer at a p-n junction interface or suppress forming of the i-layer and raise the surface donor density Nd by heat treating Ga from the surface of a p-type II-VI compound semiconductor crystal in a specified temperature range for a specified time or less to form a p-n junction. SOLUTION: A quartz ampul 1' is moved at a predetermined lowering velocity to a furnace high temperature part shown by point C to rapidly raise the temperature of the ampul 1' at a given temperature rise rate while the temperature is monitored by a thermocouple 3, and immediately after a target maximum temperature of the ampul 1' is reached, it is pulled up near an inlet of an electric furnace 12. The furnace maximum temperature at point B is adjusted so that the Ga diffusion time is 120 sec or less while the temperature of a p-type ZeSe wafer is in a range of 800-1200 deg.C, and the ampul 1' is moved up/down to diffuse Ga in a p-type ZeSe thin film layer.