SOI SEMICONDUCTOR DEVICE

SOI SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an SOI semiconductor device wherein a leakage current at a transistor end-point part is reduced through improvement in layout shape. SOLUTION: A gate electrode 3 is provided on a field l. The end part of the gate electrode 3 comprises a square region part 7 for an un...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: UEDA KIMIHIRO, SUZUKI HIROAKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide an SOI semiconductor device wherein a leakage current at a transistor end-point part is reduced through improvement in layout shape. SOLUTION: A gate electrode 3 is provided on a field l. The end part of the gate electrode 3 comprises a square region part 7 for an underlay of a contact 4 provided on a field oxide film 6. The width of a gate electrode 3a near the boundary between the field 1 and the field oxide film 6 is wider than that of the gate electrode 3 in a channel region.