METHOD FOR FORMING STRUCTURED MATERIAL LAYER

METHOD FOR FORMING STRUCTURED MATERIAL LAYER

PROBLEM TO BE SOLVED: To obtain a simple means for forming a structured material layer. SOLUTION: A first structured material layer 3 is provided as a material layer being left permanently and individual layer regions of other material layer 8 is isolated the level difference at the edge of the firs...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SCHINDLER GUENTHER DR, HARTNER WALTER
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a simple means for forming a structured material layer. SOLUTION: A first structured material layer 3 is provided as a material layer being left permanently and individual layer regions of other material layer 8 is isolated the level difference at the edge of the first structured material layer 3. The edge is formed through transition from a protruding layer region 4 to a recessed layer region and the edge of the protruding layer region 4 acts as an edge for destroying the other material layer 8.