METHOD AND DEVICE FOR ETCHING SEMICONDUCTOR SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method and device for etching a substrate, wherein constant etching is provided. SOLUTION: An etching vessel 1 where an etchant 2 is housed, and a substrate holding device which is fixed/held in the etching vessel while an etching surface 3a of a substrate 3 facing downward with the etching surface which forms an angle θ 45 deg. or higher relative to a vertical plane, are provided. With an inclination 45 deg. or more, a reaction product preventing etching at the lower part of the substrate tends to peel off and drop from the substrate surface, so that unevenness or dispersion in etching amount in vertical direction is suppressed. Thus, quality and productivity are improved.