SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device that is equipped with a barrier film which contains high-melting metal, is low in contact resistance, and high in barrier properties and a manufacturing method thereof. SOLUTION: A diffusion layer 2 is formed on a semiconductor substrate 1, and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: UEMATSU TAKAHIKO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator UEMATSU TAKAHIKO
description PROBLEM TO BE SOLVED: To provide a semiconductor device that is equipped with a barrier film which contains high-melting metal, is low in contact resistance, and high in barrier properties and a manufacturing method thereof. SOLUTION: A diffusion layer 2 is formed on a semiconductor substrate 1, and an insulating film 3 is formed on the surface of the diffusion layer 2 except on a region where a contact hole 4 is formed (a). Then, a thick Ti film 5 is formed on all the surface through a sputtering method to serve as a contact layer, and a TiN film 6 is formed on all the surface through a reactive sputtering method where a mixed gas of nitrogen and argon is used (b). Then, an amorphous silicon film is formed through a sputtering method. Thereafter, a thick amorphous silicon film 11a deposited on the side wall 4a of the contact hole 4 is dispersed by sputtering by the use of argon gas, the scattered amorphous silicon film 11a is deposited again on the base of the contact hole 4 for the formation of a thick amorphous silicon film 7b (c). The surface is coated with Al and then subjected to a thermal treatment for the formation of an Al alloy film 8 (d).
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2000100942A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2000100942A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2000100942A3</originalsourceid><addsrcrecordid>eNrjZNAJdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HX0C3VzdA4JDXJVCPFwDXL1d-NhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBgaGBgaWJkaOxkQpAgDn5iWV</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF</title><source>esp@cenet</source><creator>UEMATSU TAKAHIKO</creator><creatorcontrib>UEMATSU TAKAHIKO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a semiconductor device that is equipped with a barrier film which contains high-melting metal, is low in contact resistance, and high in barrier properties and a manufacturing method thereof. SOLUTION: A diffusion layer 2 is formed on a semiconductor substrate 1, and an insulating film 3 is formed on the surface of the diffusion layer 2 except on a region where a contact hole 4 is formed (a). Then, a thick Ti film 5 is formed on all the surface through a sputtering method to serve as a contact layer, and a TiN film 6 is formed on all the surface through a reactive sputtering method where a mixed gas of nitrogen and argon is used (b). Then, an amorphous silicon film is formed through a sputtering method. Thereafter, a thick amorphous silicon film 11a deposited on the side wall 4a of the contact hole 4 is dispersed by sputtering by the use of argon gas, the scattered amorphous silicon film 11a is deposited again on the base of the contact hole 4 for the formation of a thick amorphous silicon film 7b (c). The surface is coated with Al and then subjected to a thermal treatment for the formation of an Al alloy film 8 (d).</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20000407&amp;DB=EPODOC&amp;CC=JP&amp;NR=2000100942A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20000407&amp;DB=EPODOC&amp;CC=JP&amp;NR=2000100942A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UEMATSU TAKAHIKO</creatorcontrib><title>SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF</title><description>PROBLEM TO BE SOLVED: To provide a semiconductor device that is equipped with a barrier film which contains high-melting metal, is low in contact resistance, and high in barrier properties and a manufacturing method thereof. SOLUTION: A diffusion layer 2 is formed on a semiconductor substrate 1, and an insulating film 3 is formed on the surface of the diffusion layer 2 except on a region where a contact hole 4 is formed (a). Then, a thick Ti film 5 is formed on all the surface through a sputtering method to serve as a contact layer, and a TiN film 6 is formed on all the surface through a reactive sputtering method where a mixed gas of nitrogen and argon is used (b). Then, an amorphous silicon film is formed through a sputtering method. Thereafter, a thick amorphous silicon film 11a deposited on the side wall 4a of the contact hole 4 is dispersed by sputtering by the use of argon gas, the scattered amorphous silicon film 11a is deposited again on the base of the contact hole 4 for the formation of a thick amorphous silicon film 7b (c). The surface is coated with Al and then subjected to a thermal treatment for the formation of an Al alloy film 8 (d).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAJdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HX0C3VzdA4JDXJVCPFwDXL1d-NhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBgaGBgaWJkaOxkQpAgDn5iWV</recordid><startdate>20000407</startdate><enddate>20000407</enddate><creator>UEMATSU TAKAHIKO</creator><scope>EVB</scope></search><sort><creationdate>20000407</creationdate><title>SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF</title><author>UEMATSU TAKAHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2000100942A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>UEMATSU TAKAHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UEMATSU TAKAHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF</title><date>2000-04-07</date><risdate>2000</risdate><abstract>PROBLEM TO BE SOLVED: To provide a semiconductor device that is equipped with a barrier film which contains high-melting metal, is low in contact resistance, and high in barrier properties and a manufacturing method thereof. SOLUTION: A diffusion layer 2 is formed on a semiconductor substrate 1, and an insulating film 3 is formed on the surface of the diffusion layer 2 except on a region where a contact hole 4 is formed (a). Then, a thick Ti film 5 is formed on all the surface through a sputtering method to serve as a contact layer, and a TiN film 6 is formed on all the surface through a reactive sputtering method where a mixed gas of nitrogen and argon is used (b). Then, an amorphous silicon film is formed through a sputtering method. Thereafter, a thick amorphous silicon film 11a deposited on the side wall 4a of the contact hole 4 is dispersed by sputtering by the use of argon gas, the scattered amorphous silicon film 11a is deposited again on the base of the contact hole 4 for the formation of a thick amorphous silicon film 7b (c). The surface is coated with Al and then subjected to a thermal treatment for the formation of an Al alloy film 8 (d).</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2000100942A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T22%3A12%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=UEMATSU%20TAKAHIKO&rft.date=2000-04-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2000100942A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true