SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device that is equipped with a barrier film which contains high-melting metal, is low in contact resistance, and high in barrier properties and a manufacturing method thereof. SOLUTION: A diffusion layer 2 is formed on a semiconductor substrate 1, and an insulating film 3 is formed on the surface of the diffusion layer 2 except on a region where a contact hole 4 is formed (a). Then, a thick Ti film 5 is formed on all the surface through a sputtering method to serve as a contact layer, and a TiN film 6 is formed on all the surface through a reactive sputtering method where a mixed gas of nitrogen and argon is used (b). Then, an amorphous silicon film is formed through a sputtering method. Thereafter, a thick amorphous silicon film 11a deposited on the side wall 4a of the contact hole 4 is dispersed by sputtering by the use of argon gas, the scattered amorphous silicon film 11a is deposited again on the base of the contact hole 4 for the formation of a thick amorphous silicon film 7b (c). The surface is coated with Al and then subjected to a thermal treatment for the formation of an Al alloy film 8 (d).