MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To form a thin gate-insulated film which can ensure long reliability and a considerably shallow impurity region which can be used for an ultrafine element, by having the surface of a substrate or a thin film irradiated with X rays having desired energy, forming a hole and substituting the hole for a desired material. SOLUTION: A groove aiming at element separation is made on the surface of a p-type silicon wafer 11, and silicon oxide films 12a and 12b are embedded in the groove by using a CVD method. Then the groove is flattened by using chemical-mechanical polishing process, and a silicon nitride film 15a is stacked by using low pressure CVD method, for example. Energy for exciting the K shell electron of an Si atom is selected, total reflection conditions, an incident angle 100 is set to 0.1 deg., for example and the silicon nitride film 15a is irradiated with X rays. In a nitrogen gas atmosphere, for example, annealing is executed by using high-speed raising/lowering heat treatment. Then, an insulating film which is stable in terms of a structure can be realized by repeating X-ray irradiation and annealing.