BIDIRECTIONAL SWITCHING ELEMENT AND ITS MANUFACTURE

PROBLEM TO BE SOLVED: To provide a simple and inexpensive bidirectional switching element which is manufactured at low temperature and easily integrated with other components. SOLUTION: A first gate electrode 5 and a second gate electrode 15 comprising Mo films 6, 16 and Ti films 7, 17 which are insulated from a silicon substrate 100 by an oxide film 1b are formed and electrically connected to each other on the silicon substrate 100. A comb-shaped first main electrode 2 and a second main electrode 12 symmetrically face each other, sandwiching the first gate electrode 5 and the second electrode 15, being contained in a vacuum package 20. The first main electrode 2 and the second main electrode 12 are identical in order to uniformize electron emissivity, using the Mo film as the material.