SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF
PROBLEM TO BE SOLVED: To manufacture a semiconductor element as a semiconductor element which does not require exclusive components for an assembled device and submaterials, even through an insulative or high-resistance substrate is used for a substrate and is excellent in heat dissipation property....
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Sprache: | eng |
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Zusammenfassung: | PROBLEM TO BE SOLVED: To manufacture a semiconductor element as a semiconductor element which does not require exclusive components for an assembled device and submaterials, even through an insulative or high-resistance substrate is used for a substrate and is excellent in heat dissipation property. SOLUTION: A light-emitting diode element 1000 is constituted into a structure, wherein each layer, such as an N-type layer 1110, an active layer 1120, a P-type layer 1130 and a P side transparent electrode layer 1140, is laminated on an insulative substrate 1100 consisting of an Al2O3 film. One part of the layer 1110 is exposed. An ohmic contact part 1180, which is used as an electrode exposed on the side of the surface of a semiconductor element, is formed on the layer 1110 and on the backside of the substrate 1100, a backside bonding pad part 1160 having a conductivity is formed extending over the whole surface of the backside of the substrate 1100. Moreover, the bonding pad 1160 and the ohmic contact 1180 are electrically connected with each other through a conductive film 1170 formed on the side surface of the element 1000. |
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