MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device for making further minuteness without causing degrading of reliability. SOLUTION: A process where a plurality of wirings, wherein a first insulating film is formed on the upper surface and the side surface, are formed on a base material substrate 10, a process where a second insulating film 28 is formed, on the base material substrate 10 and the wirings 20, so as to fill among a plurality of wirings 20 while deposited in almost vertical direction relative to the base material substrate, a process where a third insulating film 30 of different etching characteristics from the second insulating film is formed on the second insulating film 28, a process where a third insulating film 30 is etched with the second insulating film 28 as a stopper, and a process where a contact hole 32 for reaching the base material substrate 10 by edging the second insulating film 28, are provided.