MANUFACTURE OF SEMICONDUCTOR DEVICE HAVING LOW- RESISTANCE SILICIDE

PROBLEM TO BE SOLVED: To provide a suitable method suitable in manufacturing a semiconductor device having a low-resistance silicide, which can prevent mixing of oxygen into the silicide at low cost. SOLUTION: A semiconductor device having a low-resistance silicide is manufactured on a silicon substrate 24. A Co film 50 is formed on the substrate 24. The film 50 is formed so that the thickness of a non-oxidized part 54 of the film 50 other than an oxidized cobalt film 52 becomes larger than a film thickness for use in silicide formation reaction. The substrate 24 is subjected to heat treatment to react Co with silicon, and to form a silicide in an electrode part. The silicide formation reaction is controlled so that only the non-oxidized layer 54 of the Co film 50 contributes to the silicide formation reaction.