WAFER APPEARANCE INSPECTION DEVICE AND ITS METHOD

PROBLEM TO BE SOLVED: To improve the throughput of an inspection process by providing a defect judgment part comparing the position of a defect area, which is obtained in a pattern area calculation part, with the position of the defect area which is obtained in a defect area calculation part, and ju...

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Bibliographische Detailangaben
1. Verfasser:	SESHIMA KOICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve the throughput of an inspection process by providing a defect judgment part comparing the position of a defect area, which is obtained in a pattern area calculation part, with the position of the defect area which is obtained in a defect area calculation part, and judging the influence degree of a defect. SOLUTION: A defect judgment part 15 compares the position of a pattern area which is obtained in a pattern area 12, with the position of the defect area which is obtained in a defect area calculation part 14, and the influence degree of a defect is judged. A means for obtaining a distance between the pattern area and the defect area, comparing the distance with a reference distance and judging the influence degree of the defect is installed. The position and the size of the defect can be decided. Furthermore, the position relation of the defect and the pattern can be made clear, and the influence of the defect on the pattern can automatically be certified without the aid of an operator.