POLISHING METHOD

PROBLEM TO BE SOLVED: To effectively prevent the generation of partial fine etching phenomenon by performing the main polishing of a first stage, performing the working of a second stage while lowering a load from a set load, and performing the rinsing of a third stage while reducing a load more and while flowing the washing liquid. SOLUTION: Affixing blocks 4 are placed on a polishing surface plate 1, and each pressure plate 5 is lowered for fitting, and the working liquid is flowed so as to adapt a wafer 3 with the working liquid and a polishing pad 2. Continuously, a load is raised to a set load (25 kPa), and the polishing surface plate 1 is rotated while quantitatively supplying the working liquid, and the working is performed for about 20 minutes. Continuously, pressure is reduced and the load is lowered to 6 kPa, and the working with a low load is performed for about 1 minute. Furthermore, pressure is reduced to the lowest load (3 kPa), and at the same time, supply of the working liquid is stopped, and the washing liquid is supplied so as to rinse the surface. With this method, generation of partial fine etching phenomenon due to unevenness of concentration and distribution of the working liquid can be restrained.