MANUFACTURE FOR SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To obtain a manufacture for a semiconductor device in which a manufacturing process is shortened without reducing TFT characteristics in manufacturing a TFT substrate. SOLUTION: This is a manufacturing method for a semiconductor device having a semiconductor layer, a source electrode and a drain electrode 13 formed on this semiconductor layer, and a source wiring connected to this source electrode 12. At this time, this contains (a) a step of coating this semiconductor layer and forming a metal layer; (b) a step of forming a resist layer 8 having a desired pattern on this metal layer; (c) a step of etching this metal layer by use of this resist layer 8 as a mask and forming the source electrode 12, the drain electrode 13, and the source wiring; and (d) a step of etching this semiconductor layer by use of the resist layer 8 as a mask and forming a transistor gap part 11 between the source electrode 12 and the drain electrode 14. Each etching step in the steps (c) and (d) is carried out by use of the same resist layer 8 as a mask in the same chamber.