PRODUCTION OF ITO SINTERED COMPACT AND FORMATION OF THIN ITO FILM

PROBLEM TO BE SOLVED: To produce an ITO sintered compact giving a thin ITO film having low resistance and high transmittance by vacuum deposition at 150 deg.C substrate temp. and a high film formation rate. SOLUTION: Powders of Al2O3, SiO2 and MgO are added to ITO powder consisting essentially of in...

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Bibliographische Detailangaben
1. Verfasser:	SUGIHARA MASAHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To produce an ITO sintered compact giving a thin ITO film having low resistance and high transmittance by vacuum deposition at 150 deg.C substrate temp. and a high film formation rate. SOLUTION: Powders of Al2O3, SiO2 and MgO are added to ITO powder consisting essentially of indium oxide and tin oxide and they are compacted and sintered to produce an ITO sintered compact. In this method, ITO powder and powders of Al2O3, SiO2 and MgO are mixed, compacted, heat-treated and comminuted to form a grain size adjusted powder, this powder is added to a powdery starting material consisting of ITO powder and powders of Al2O3, SiO2 and MgO and they are mixed, compacted and sintered.