METHOD OF FORMING CAPACITORS IN INTEGRATED CIRCUIT

PROBLEM TO BE SOLVED: To provide a method which has compatibility with the existing CMOS components manufacturing process in manufacturing a capacitor, having little possibility of causing the dielectric breakdown. SOLUTION: A first metal layer is deposited and etched with leaving a region 12, corresponding to a capacitor plate and contact region 13 on the first metal layer, an input layer 15 is deposited between metallization layers, a first opening is formed into an upper part of the capacitor plate 12, a thin insulation layer 17 is deposited, a second opening 20 is formed into an upper part of the contact region, a second metal layer 24 is deposited for completely filling the opening 20, a physical-chemical etching is applied to suppress the outside region of the second metal layer, and a third metal layer is deposited to cause to be left at positions 31, 32 on the third metal layer above the contact region and capacitor region.