MANUFACTURE OF OXY SILICON CARBIDE HYDRIDE FILM HAVING LOW DIELECTRIC CONSTANT

PROBLEM TO BE SOLVED: To obtain a method for manufacturing a low-dielectric-constant thin film of oxy silicon carbide hydride through chemical deposition. SOLUTION: This method for manufacturing an oxy silicon carbide hydride film comprises a step of introducing a reactive gas mixture of methyl-cont...

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Bibliographische Detailangaben
Hauptverfasser: LOBODA MARK JON, SEIFFERLY JEFFREY ALAN
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a method for manufacturing a low-dielectric-constant thin film of oxy silicon carbide hydride through chemical deposition. SOLUTION: This method for manufacturing an oxy silicon carbide hydride film comprises a step of introducing a reactive gas mixture of methyl-containing silane and an oxygen application gas into a chemical deposition chamber having a substrate placed therein, causing a reaction of the methyl-containing silane and oxygen application gas at a temperature of 25-500 deg.C and adjusting the amount of oxygen present in the reaction to form a film having a dielectric constant of 3.6 or less and containing hydrogen, silicon and oxygen on the substrate.