PLASMA PROCESSOR

PROBLEM TO BE SOLVED: To provide a plasma etching device capable of equal etching process without charge up damage to a substrate and a sputtering device which is equal to the substrate and besides in which stress does not occur, by enabling the equalization of density of produced plasma to the surf...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KAIHARA TATSU, INO KAZUHIDE, NITTA TAKEHISA, OMI TADAHIRO, HIRAYAMA MASAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma etching device capable of equal etching process without charge up damage to a substrate and a sputtering device which is equal to the substrate and besides in which stress does not occur, by enabling the equalization of density of produced plasma to the surface of the substrate and the equalization of the self bias potential without rotating a magnetic field application means, keeping the pressure distribution on a substrate to be treated equal. SOLUTION: A plasma processor is equipped with two parallel plate type of electrodes 1102 and II105, and in this plasma processor which is provided with a means of application of a horizontal and unidirectional magnetic field to the face where plasma treatment is to be performed, an auxiliary electrode 107 is installed around one electrode, and space 111 capable of plasma excitation is provided on the opposite side to the face where the auxiliary electrode 107 opposes the other electrode, and the auxiliary electrode 107 has a means 109 for applying high frequency.