WAFER RACK WITH GAS DISTRIBUTION DEVICE

PROBLEM TO BE SOLVED: To uniformly distribute gas on a wafer, by arranging a gas distributor at least above each wafer, and providing a gas distributor with a number of opening parts which supply gas to a wafer therethrough. SOLUTION: A wafer rack 1 consists of two side plates 3 arranged in oppositi...

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Bibliographische Detailangaben
1. Verfasser:	BEULENS JACOBUS JOHANNES
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To uniformly distribute gas on a wafer, by arranging a gas distributor at least above each wafer, and providing a gas distributor with a number of opening parts which supply gas to a wafer therethrough. SOLUTION: A wafer rack 1 consists of two side plates 3 arranged in opposition mutually. Each side plate 3 has a supporting ridge 4 for loading a wafer 2 therebetween. A gas distribution chamber 5 is arranged between two wafers 2, and the gas distribution chamber 5 is connected to one channel 6 in each side plate 3 in both sides. Each gas distribution chamber 5 consists of an upper plate 7 and a bottom plate 8, and the bottom plate 8 has a number of opening parts 9. As a result, gas flow in a radius direction is formed on each wafer 2 and gas is distributed uniformly on the wafer 2.