ETCHING METHOD FOR CONDUCTIVE LAYER
PROBLEM TO BE SOLVED: To effect chemical etching which exhibits better performance and which is more flexible, simpler and quick in practice by depositing a mask containing a hot melt ink on a layer to be etched. SOLUTION: An SnO2: F layer 2 is spread over a glass substrate. A hot melt ink is direct...
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| creator | ROUBEROL MARC |
| description | PROBLEM TO BE SOLVED: To effect chemical etching which exhibits better performance and which is more flexible, simpler and quick in practice by depositing a mask containing a hot melt ink on a layer to be etched. SOLUTION: An SnO2: F layer 2 is spread over a glass substrate. A hot melt ink is directly deposited into a desired pattern by ink jet printing, thereby forming a mask 3. Then, Zn (or Al) powder 4 is deposited on the surface of the mask 3. Then, a solution having acidic pH is deposited on the surface of the mask 3 (in the case of the Al powder, a solution having alkaline pH is used). Nascent hydrogen such as to form the layer 2 into an unmasked region 2' is produced, thereby cleaning the substrate. Then, the mask 3 is removed, and the layer 2 etched in correspondence to the pattern defined by the mask 3, i.e., a strip having the desired pattern is obtained. As a result, chemical etching that is more flexible, simpler and quick in practice can be effected. |
| format | Patent |
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SOLUTION: An SnO2: F layer 2 is spread over a glass substrate. A hot melt ink is directly deposited into a desired pattern by ink jet printing, thereby forming a mask 3. Then, Zn (or Al) powder 4 is deposited on the surface of the mask 3. Then, a solution having acidic pH is deposited on the surface of the mask 3 (in the case of the Al powder, a solution having alkaline pH is used). Nascent hydrogen such as to form the layer 2 into an unmasked region 2' is produced, thereby cleaning the substrate. Then, the mask 3 is removed, and the layer 2 etched in correspondence to the pattern defined by the mask 3, i.e., a strip having the desired pattern is obtained. As a result, chemical etching that is more flexible, simpler and quick in practice can be effected.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GLASS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; METALLURGY ; MINERAL OR SLAG WOOL ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PRINTED CIRCUITS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000128&DB=EPODOC&CC=JP&NR=2000031131A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000128&DB=EPODOC&CC=JP&NR=2000031131A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ROUBEROL MARC</creatorcontrib><title>ETCHING METHOD FOR CONDUCTIVE LAYER</title><description>PROBLEM TO BE SOLVED: To effect chemical etching which exhibits better performance and which is more flexible, simpler and quick in practice by depositing a mask containing a hot melt ink on a layer to be etched. 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As a result, chemical etching that is more flexible, simpler and quick in practice can be effected.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GLASS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>JOINING GLASS TO GLASS OR OTHER MATERIALS</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PRINTED CIRCUITS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</subject><subject>SURFACE TREATMENT OF GLASS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFB2DXH28PRzV_B1DfHwd1Fw8w9ScPb3cwl1DvEMc1XwcYx0DeJhYE1LzClO5YXS3AxKbiBtuqkF-fGpxQWJyal5qSXxXgFGBkBgbGhobOhoTJQiAJKDIu8</recordid><startdate>20000128</startdate><enddate>20000128</enddate><creator>ROUBEROL MARC</creator><scope>EVB</scope></search><sort><creationdate>20000128</creationdate><title>ETCHING METHOD FOR CONDUCTIVE LAYER</title><author>ROUBEROL MARC</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2000031131A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GLASS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>PRINTED CIRCUITS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><toplevel>online_resources</toplevel><creatorcontrib>ROUBEROL MARC</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ROUBEROL MARC</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ETCHING METHOD FOR CONDUCTIVE LAYER</title><date>2000-01-28</date><risdate>2000</risdate><abstract>PROBLEM TO BE SOLVED: To effect chemical etching which exhibits better performance and which is more flexible, simpler and quick in practice by depositing a mask containing a hot melt ink on a layer to be etched. SOLUTION: An SnO2: F layer 2 is spread over a glass substrate. A hot melt ink is directly deposited into a desired pattern by ink jet printing, thereby forming a mask 3. Then, Zn (or Al) powder 4 is deposited on the surface of the mask 3. Then, a solution having acidic pH is deposited on the surface of the mask 3 (in the case of the Al powder, a solution having alkaline pH is used). Nascent hydrogen such as to form the layer 2 into an unmasked region 2' is produced, thereby cleaning the substrate. Then, the mask 3 is removed, and the layer 2 etched in correspondence to the pattern defined by the mask 3, i.e., a strip having the desired pattern is obtained. As a result, chemical etching that is more flexible, simpler and quick in practice can be effected.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY MINERAL OR SLAG WOOL MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PRINTED CIRCUITS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS |
| title | ETCHING METHOD FOR CONDUCTIVE LAYER |
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