ETCHING METHOD FOR CONDUCTIVE LAYER

PROBLEM TO BE SOLVED: To effect chemical etching which exhibits better performance and which is more flexible, simpler and quick in practice by depositing a mask containing a hot melt ink on a layer to be etched. SOLUTION: An SnO2: F layer 2 is spread over a glass substrate. A hot melt ink is direct...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: ROUBEROL MARC
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To effect chemical etching which exhibits better performance and which is more flexible, simpler and quick in practice by depositing a mask containing a hot melt ink on a layer to be etched. SOLUTION: An SnO2: F layer 2 is spread over a glass substrate. A hot melt ink is directly deposited into a desired pattern by ink jet printing, thereby forming a mask 3. Then, Zn (or Al) powder 4 is deposited on the surface of the mask 3. Then, a solution having acidic pH is deposited on the surface of the mask 3 (in the case of the Al powder, a solution having alkaline pH is used). Nascent hydrogen such as to form the layer 2 into an unmasked region 2' is produced, thereby cleaning the substrate. Then, the mask 3 is removed, and the layer 2 etched in correspondence to the pattern defined by the mask 3, i.e., a strip having the desired pattern is obtained. As a result, chemical etching that is more flexible, simpler and quick in practice can be effected.