MANUFACTURING FACILITIES FOR SEMICONDUCTOR DEVICE, PATTERN FORMATION OF SEMICONDUCTOR DEVICE USING THE SAME, AND PHOTORESIST FOR SEMICONDUCTOR MANUFACTURE TO WHICH THE FACILITY IS APPLIED

PROBLEM TO BE SOLVED: To provide the manufacturing facilities for semiconductor devices which form a pattern of preferred size, a pattern forming method for the semiconductor devices, and a photoresist for semiconductor manufacturing which utilize them. SOLUTION: Manufacturing facilities 30 are equipped with a photoresist coating part 36 which coats a wafer with specific photoresist, a development part 4 which forms a photoresist pattern on the wafer exposed after being coated with the photoresist, and a cross-linking reaction part which submits the photoresist pattern to cross-linking reaction so as to provide a stable flow in a flow process of the photoresist pattern. Furthermore, a stage for coating the wafer with the photoresist, a stage for exposing the photoresist while a photomask is arrayed, a stage for forming the photoresist pattern on the wafer, a stage for submitting the photoresist pattern to cross-linking reaction, and a stage for subjecting to flow baking of the photoresist pattern after the cross- linking reaction are included.