SEMICONDUCTOR STORAGE AND ITS REFRESH METHOD

PROBLEM TO BE SOLVED: To increase the number of storage element groups simultaneously performing refresh processing within the range not exceeding an allowable maximum calorific value of a semiconductor storage circuit by providing plural pieces of refresh execution means with the number of mutually different storage means simultaneously performing the refresh processing and selecting the optional refresh execution means. SOLUTION: In refresh circuits R1-Rn loaded on the semiconductor storage circuit 11, the number of storage element groups simultaneously performing the refresh processing are different mutually. For instance, when the number of storage element groups loaded on the semiconductor storage circuit 11 is five pieces this time, the refresh circuit simultaneously executing the refresh processing for five pieces of storage element groups is selected. For instance, when the refresh circuit R2 is selected, fuse wiring FH1, BH1, FHn, BHn excepting the fuse wiring FH2, BH2 are all cut out, and only the refresh circuit R2 is validated.