OXIDE SUPERCONDUCTOR, ITS PREPARATION AND APPARATUS FOR PREPARING THE SAME

PROBLEM TO BE SOLVED: To provide an oxide superconductor excellent in electrical and magnetic properties and to provide the method and apparatus for stably preparing the oxide superconductor with good reproductivity. SOLUTION: When the crystal growth is carried out by bringing a seed crystal 100a or...

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Hauptverfasser:	KOBAYASHI SHUICHI, HASEYAMA HIDEETSU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONCRETE CRYSTAL GROWTH ELECTRICITY INORGANIC CHEMISTRY LIME, MAGNESIA METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL REFRACTORIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SLAG TREATMENT OF NATURAL STONE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an oxide superconductor excellent in electrical and magnetic properties and to provide the method and apparatus for stably preparing the oxide superconductor with good reproductivity. SOLUTION: When the crystal growth is carried out by bringing a seed crystal 100a or 100b into contact with an intermediate compact 200a or 200b, the seed crystal is placed on a seed crystal stand 5 and arranged in a heat treatment area. When conditions for heat treatment are filled, the crystal growth is carried out by adsorbing and holding the seed crystal on an adsorbing pipe 33 of a crystal carrier 3, transferring the seed crystal to an upper part of the intermediate compact and placing the seed crystal on the compact. The oxide superconductor having an orientation surface of >=15 cm2, wherein the deviation of the azimuth between crystals is not exceeding ±10 deg.C, or a carbon content of