FIELD EFFECT TRANSISTOR AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To provide a field effect transistor where a resistor that is used for stable operation can be provided without wasting an additional space and increasing processes in number. SOLUTION: A resistor 108 used for stabilization of operation is inserted between a gate leading-out electrode 103 and a gate bus bar 102. Gate fingers 101 are extended from the gate bus bar 102. A drain stripe electrode 104 and a source stripe electrode 106 are provided by the side of each gate finger 101 so as to sandwich it between them. The drain stripe electrodes 104 and the source stripe electrodes 106 are each extended from a drain leading-out electrode 105 and source leading-out electrodes 107. The gate fingers 101, gate bus bar 102, and gate leading-out electrodes 103 are each formed of a gate metal layer and an Au plating player which are used for the formation of a Schottky gate, and the resistor 108 is formed of a gate metal layer.