POWER TRANSISTOR

PROBLEM TO BE SOLVED: To provide a power transistor with a current detecting function for accurately detecting excess currents, and for preventing the deterioration or the destruction of the reliability of a chip. SOLUTION: An emitter electrode 1, through which main currents are flowing, is provided...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KAMIUCHI HAJIME, KIRIHARA TAKESHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a power transistor with a current detecting function for accurately detecting excess currents, and for preventing the deterioration or the destruction of the reliability of a chip. SOLUTION: An emitter electrode 1, through which main currents are flowing, is provided with an emitter bonding pad part 1a and a bonding pad part 1c for current detection separated from the emitter bonding pad part 1a by a prescribed distance. Also, a wiring part 1b for current detection as a resistance for current detection for connecting the emitter bonding pad part 1a with the bonding pad part 1c for current detection is provided in a region, in which when excess currents are flowing through the emitter electrode 1, currents tend be concentrated easily, and temperature can be made higher than the other region.