SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

PROBLEM TO BE SOLVED: To reduce the generation of cracks of a passivation film due to a filler in a sealing material. SOLUTION: The inter-wiring distance of a third layer wiring M3 which is the uppermost layer wiring is set as a distance d1, sufficiently smaller than the grain diameter (2.X) of a filler 20, for example, 1 μm or smaller, or a distance d2 sufficiently larger than the grain diameter of the filler 20, for example, 4 μm or larger. Also, the distance d2 can be set as 2(x+y) cosθ or larger. In this case, (x) is a radius x of the filler 20, and (y) is a distance y from the upper edge of the third layer wiring M3 until the contact point of a passivation film 17 with the filter 20, and θ is an angle θ made by a face, including the central point of the filter 20, in parallel with a semiconductor substrate 1 and a radius vector drawn from the central point to the contact point.