SELECTIVE SEMISPHERICAL SILICON GRAIN CHARGE STORING ELECTRODE FORMATION OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a selective semispherical silicon grain(HSG) charge storing electrode formation of semiconductor device, capable of satisfactorily securing capacitor effective surface area by attaining a specific grain size when forming a selective HSG. SOLUTION: At dryetching step of an amorphous silicon film 12 for securing a charge storing electrode, after etching a part of the amorphous silicon film 12 using a general carbon halogenide based gas, the remainder of the film 12 is etched away last, using a silicon etching gas containing no carbon such as SF6 gas, Cl2+O2 gas, HBr gas, etc., or in at selective etching step of the film 12, an etching gas containing no carbon such as SF6 gas, Cl2+O2 gas, HBr gas is used.