DISPOSITIVO A SEMICONDUTTORE CON MODALITA' OPERATIVE LINEARE E A COMMUTAZIONE MIGLIORATE, METODO DI FABBRICAZIONE DEL DISPOSITIVO A SEMICONDUTTORE, E METODO DI POLARIZZAZIONE DEL DISPOSITIVO A SEMICONDUTTORE
A semiconductor device that includes a semiconductor body, having a front side and a back side opposite to one another in a first direction of extension; a drift region, which extends in the semiconductor body, faces the front side, and has a first type of conductivity and a first value of doping; a...
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Sprache: | ita |
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Zusammenfassung: | A semiconductor device that includes a semiconductor body, having a front side and a back side opposite to one another in a first direction of extension; a drift region, which extends in the semiconductor body, faces the front side, and has a first type of conductivity and a first value of doping; a body region, which has a second type of conductivity opposite to the first type of conductivity, extends in the drift region, and faces the front side of the semiconductor body; a first control terminal, which extends on the front side of the semiconductor body, at least partially overlapping, in the first direction of extension, the body region; and a second control terminal, which extends to a first depth in the semiconductor body, inside the body region, and is staggered with respect to the first control terminal. |
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