DISPOSITIVO DI MEMORIA A SEMICONDUTTORE E PROCEDIMENTO PER LA SUA FABBRICAZIONE

PURPOSE:To prevent edges of a chip from being broken when the chip is subjected to a dicing by the use of a silicon wafer, wherein the main surface of the silicon wafer is a {100} plane and four peripheral side surfaces of the same are {110} planes, so that a thin capacitor can have four peripheral...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	YASUE TAKAO
Format:	Patent
Sprache:	ita
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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