IMPIANTO PER L'OSSIDAZIONE TERMICA DI DISCHETTI DI SILICIO
The plant 1 comprises: a stove 3 having a first tube 4 along which flows an inert gas and trichloroethane and a second tube 6 within the first tube along which flows oxygen for the oxidisation of silicon disks 2, a heating member 7 fitted outside the first tube, a third tube 51 in which thermal deco...
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Format: | Patent |
Sprache: | ita |
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Zusammenfassung: | The plant 1 comprises: a stove 3 having a first tube 4 along which flows an inert gas and trichloroethane and a second tube 6 within the first tube along which flows oxygen for the oxidisation of silicon disks 2, a heating member 7 fitted outside the first tube, a third tube 51 in which thermal decomposition of the hydrocarbons present takes place in the oxygen and which is installed within the first tube between a lateral wall 8 thereof and a lateral wall 25 of the second tube, and a cryostat 57 which absorbs the water which forms with decomposition of the hydrocarbons. |
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