DISPOSITIVO MONOLITICO DI POTENZA A SEMICONDUTTORE DI TIPO VERTICALE CON UNA PROTEZIONE CONTRO LE CORRENTI PARASSITE

DISPOSITIVO MONOLITICO DI POTENZA A SEMICONDUTTORE DI TIPO VERTICALE CON UNA PROTEZIONE CONTRO LE CORRENTI PARASSITE

The monolithic vertical-type semiconductor power device comprises an N+ type substrate (1) over which there is superimposed an N- type epitaxial layer (2) in which there is obtained aP type insulation pocket (3). Such pocket contains N type regions (4, 15) and P type regions (8) which in turn contai...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BAZZANO, GAETANO, PALARA, SERGIO
Format: Patent
Sprache:ita
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The monolithic vertical-type semiconductor power device comprises an N+ type substrate (1) over which there is superimposed an N- type epitaxial layer (2) in which there is obtained aP type insulation pocket (3). Such pocket contains N type regions (4, 15) and P type regions (8) which in turn contain N+ type regions (11, 12; 13; 14) and of P type regions (6, 7, 9, 10) which define circuit components (T1, T2, T5) of the device. Insulation pocket (3) is wholly covered by a first metallisation (21, 30) connected to ground. Such metallisation (21, 30) is in turn protected by a layer of insulating material (18) suitable for allowing the crossing of metal tracks (20) or of a second metallisation (31) for the connection of the different components.