OSSIDO-NITRURO-OSSIDO. PROCESSO DI FABBRICAZIONE PER CELLE EPROM CON DIELETTRICO

OSSIDO-NITRURO-OSSIDO. PROCESSO DI FABBRICAZIONE PER CELLE EPROM CON DIELETTRICO

The process calls for covering of the dielectric (6) with a thin additional layer of polysilicon (10) which has the function of protecting the dielectric from any defects which would otherwise be introduced from the subsequent masking.

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Bibliographische Detailangaben
Hauptverfasser: GABRIELLA GHIDINI, GIUSEPPE CRISENZA
Format: Patent
Sprache:ita
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The process calls for covering of the dielectric (6) with a thin additional layer of polysilicon (10) which has the function of protecting the dielectric from any defects which would otherwise be introduced from the subsequent masking.