UTENSILE DA TAGLIO E PROCEDIMENTO PER FABBRICARLO

Cutting tool has a surface layer contg. microcrystalline cpds. of at least one metal and at least one of C, N, O, B and Si, the crystallographic plane of the microcrystals being oriented parallel to the plane of the tool surface. Pref. the crystallographic plane of orientation of the crystals has mi...

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Hauptverfasser:	ALEXEI GEORGIEVICH GAVRILOV, VIKTOR PETROVICH ZHED, EVGENY MIKHAILOVICH STEPNOV, GALINA KONSTANTINOVNA GALITSKAYA, ALBERT MIKHAILOVICH BOYARUNAS, ANATOLY MIKHAILOVICH LEIN, ANDREI KARLOVICH SINELSCHIKOV
Format:	Patent
Sprache:	ita
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	Cutting tool has a surface layer contg. microcrystalline cpds. of at least one metal and at least one of C, N, O, B and Si, the crystallographic plane of the microcrystals being oriented parallel to the plane of the tool surface. Pref. the crystallographic plane of orientation of the crystals has min. surface energy. Surface is layer is pref. formed by metal ion mbardment in the presence of a gaseous cpd. of onr or more of C, N, O, B and Si. Substrate is heated by cathodic bombardment with metal ions in the presence of a gas reagent contg. C, N, O B or Si to a temp. 100 deg.C below the temp. at which the substate loses strength. The temp. is then held in a range between this temp. and 50 deg.C while the gas pressure is adjusted within the range 13.33-0.0133 Pa.