TRASDUTTORE ESTENSIMETRICO A SEMICONDUTTORI

The extension transducer comprises a cylindrical box (1) with a tube (2) attached to one end to provide a pressure supply (P). The other face of the box carries the sensitive element (3). The element comprises a substrate of monocrystalline sapphire with epitaxial resistances formed of silicon on th...

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Bibliographische Detailangaben
Hauptverfasser:	VLADIMIR EMELYANOVICH BEIDEN, VLADIMIR MIKHAILOVICH KARNEEV, MIKHAIL VASILIEVICH SUROVIKOV, VLADIMIR MIKHAILOVICH STUCHEBNIKOV VIKTOR VLADIMIROVICH KHASIKOV, GEORGY GENRYKHOVICH JORDAN, ALEXEI VASILIEVICH BELOGLAZOV, VLADIMIR SERGEEVICH PAPKOV
Format:	Patent
Sprache:	ita
Schlagworte:	DEAF-AID SETS ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKEACOUSTIC ELECTROMECHANICAL TRANSDUCERS PUBLIC ADDRESS SYSTEMS
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Beschreibung
Zusammenfassung:	The extension transducer comprises a cylindrical box (1) with a tube (2) attached to one end to provide a pressure supply (P). The other face of the box carries the sensitive element (3). The element comprises a substrate of monocrystalline sapphire with epitaxial resistances formed of silicon on the surface. The resistances are situated in pairs, parallel and perpendicular to the radius of the sensitive membrane. The plane of the sapphire substrate is orientated in the (1o12) direction, whilst the resistances (5) are placed on the (100) plane following the directions (011) and (011). The silicon has a concentration of holes between 3.5 x 10 power 19 and 3 x 10 power 20 per cubic cm.