SOLUZIONE A BASE DI PIROCATECHINA AMMINA ACQUA, PARTICOLARMENTE PER LA RIVELAZIONE DI DIFETTI IN WAFERDI SILICIO

The invention is directed to a novel method for detecting surface damage to polished silicon wafers. For very fine defects and scratches an oxidation step is used. The oxide is removed and the wafer is treated in an etch solution containing pyrocatechol, ethylene diamine and water. The defects are d...

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Bibliographische Detailangaben
1. Verfasser:	SHIH KWANG KUO
Format:	Patent
Sprache:	ita
Schlagworte:	BASIC ELECTRIC ELEMENTS CORRECTION OF TYPOGRAPHICAL ERRORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES LINING MACHINES MEASURING PERFORMING OPERATIONS PHYSICS PRINTING SELECTIVE PRINTING MECHANISMS SEMICONDUCTOR DEVICES STAMPS TESTING TRANSPORTING TYPEWRITERS
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Beschreibung
Zusammenfassung:	The invention is directed to a novel method for detecting surface damage to polished silicon wafers. For very fine defects and scratches an oxidation step is used. The oxide is removed and the wafer is treated in an etch solution containing pyrocatechol, ethylene diamine and water. The defects are detectable by the naked eye.