Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente

A semiconductor die is attached on a die-attachment portion of a substrate such as a leadframe. The semiconductor die has a front surface opposite the substrate and one or more contact pads at the front surface having an outer surface finishing of a first electrically conductive material such as NiPd or Al. An encapsulation of laser direct structuring, LDS material is molded onto the semiconductor die attached on the substrate. Laser beam energy is applied to selected locations of the front surface of the encapsulation of LDS material to activate the LDS material at the selected locations and structure therein electrically conductive formations comprising one or more vias towards the contact pad. The vias comprise a second electrically conductive material that is different from the first electrically conductive material of the outer surface finishing of the contact pad. Prior to growing the second electrically conductive material a nickel layer is formed over the outer surface finishing of the contact pad, wherein the nickel layer promotes adhesion between the second electrically conductive material and the first electrically conductive material.