PROCEDIMENTO PER FABBRICARE DISPOSITIVI A SEMICONDUTTORE E DISPOSITIVO A SEMICONDUTTORE CORRISPONDENTE

A semiconductor device (10) comprises a semiconductor die (14) arranged on a substrate such as a leadframe (12A, 12B) and an encapsulation of laser direct structuring, LDS material (16; 161, 162) molded onto the semiconductor die (14).A through mold via or TMV (182) extending through the encapsulation of LDS material (16; 161, 162) comprises:an enlarged collar section (182A) that extends through a first portion (161) of the encapsulation (16) from an outer surface (1613) to an intermediate plane (1612) of the encapsulation (16), the enlarged collar section (182A) having a cross-sectional area at the intermediate plane (1612) of the encapsulation (16), anda frusto-conical section (182B) that extends through a second portion (162) of the encapsulation (16; 161, 162) from a first end having a first diameter at the intermediate plane (1612) to a second end having a second diameter away from the intermediate plane (1612) of the encapsulation (16; 161, 162).The first end of the frusto-conical section (182B) has an area smaller than the cross-sectional area of the enlarged collar section (182A) at the intermediate plane (1612) and the second diameter of the frusto-conical section (182B) is smaller than the first diameter of the frusto-conical section (182B). The through mold via (182) can thus have an aspect ratio which is not limited to 1:1.